DocumentCode
3192257
Title
An integrated 18.75/37.5 GHz FET frequency doubler
Author
Meszaros, S. ; Verver, C.J. ; Douville, R.J.P. ; Hoefer, W.J.R.
Author_Institution
Commun. Res. Centre, Ottawa, Ont., Canada
fYear
1988
fDate
25-27 May 1988
Firstpage
815
Abstract
The design and performance of an 18.75/37.5-GHz FET frequency doubler is presented. The doubler is implemented in a combination of antipodal finline and suspended microstrip, permitting the entire unit to be integrated on a single substrate. The resulting circuit is a particularly simple and cost-effective component for low- and medium-power applications such as local oscillators. The doubler was built using an NEC673 FET and has a conversion loss of 5.8 dB over a 350-MHz input bandwidth.<>
Keywords
field effect transistor circuits; frequency multipliers; hybrid integrated circuits; microwave integrated circuits; waveguide couplers; 18.75 GHz; 350 MHz; 37.5 GHz; 5.8 dB; EHF; FET frequency doubler; MM-waves; NEC673 FET; SHF; antipodal finline; bandwidth; conversion loss; cost-effective component; design; local oscillators; medium-power applications; performance; single substrate; suspended microstrip; Bandwidth; Circuits; FETs; Finline; Frequency; Impedance matching; Microstrip; Propagation losses; Scattering parameters; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22157
Filename
22157
Link To Document