Title :
Size dependent effects in annealed, laterally-oxidized AlGaInP laser diodes
Author :
Floyd, P.D. ; Treat, D.W.
Author_Institution :
Electronic Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
Abstract :
It is shown that post-fabrication thermal annealing improves device characteristics of laterally-oxidized AIGaInP lasers and the effect depends strongly on device width. Threshold current (Ith ) reductions of 0-34 % and increases in external differential quantum efficiency (ηd) of 10 % to >200 % are measured. The GaInP/AlGaInP laser heterostructure contains a p-type AlAs oxidation layer located above the GaInP quantum well active region
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium compounds; indium compounds; oxidation; quantum well lasers; size effect; 10 to 200 percent; AlAs; AlGaInP; GaInP quantum well active region; GaInP-AlGaInP; GaInP/AlGaInP laser heterostructure; annealed laterally-oxidized AlGaInP laser diodes; device characteristics; device width; external differential quantum efficiency; p-type AlAs oxidation layer; post-fabrication thermal annealing; size dependent effects; threshold current reductions; Annealing; Apertures; Bars; Diode lasers; Gas lasers; Oxidation; Passivation; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645281
