DocumentCode :
3192311
Title :
Experience on the high-power SiC microwave dummy-load using SiC absorber
Author :
Matsumoto, H. ; Iino, Y. ; Fujiwara, C. ; Kabeya, Z. ; Onda, T.
Author_Institution :
Mitsubishi Heavy Ind. Ltd., Japan
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
842
Abstract :
A new type microwave dummy-load using SiC ceramic, which has an indirect water cooling structure, was successfully operated with up to 50-MW of rf power at a 1-μs pulse width and 50-pps repetition rate in the S-band frequency. The input VSWR obtained was less than 1:1.1 at the maximum rf power. The vacuum pressure in the rf-load raised from the base pressure of 1×10-6 Pa with no rf power to 2×10-6 Pa at the maximum rf-power; and there was found to be no special outgassing from the SiC-ceramics
Keywords :
accelerator RF systems; ceramics; outgassing; silicon compounds; 0.000001 Pa; 1 mus; 50 MW; S-band; SiC; SiC absorber; SiC microwave dummy-load; VSWR; outgassing; rf power; vacuum pressure; Ceramics; Cooling; Electrons; Linear particle accelerator; Powders; Radio frequency; Silicon carbide; Space vector pulse width modulation; Thermal conductivity; Thermal expansion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Particle Accelerator Conference, 1999. Proceedings of the 1999
Conference_Location :
New York, NY
Print_ISBN :
0-7803-5573-3
Type :
conf
DOI :
10.1109/PAC.1999.795374
Filename :
795374
Link To Document :
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