Title :
High power and high efficiency GaAs based VCSELs
Author :
Michalzik, R. ; Ebeling, K.J. ; Grabberr, M. ; Wiedenmann, D. ; Jager, R. ; Jung, C. ; Weigl, B.
Author_Institution :
Ulm Univ., Germany
Abstract :
Summary form only given. The realization of optimized vertical-cavity laser diodes with conversion efficiencies over 55% at 850 nm wavelength and top surface emitted output powers in excess of 100 mW in cw and 1.5 W in pulsed operation at 980 nm is reported
Keywords :
III-V semiconductors; gallium arsenide; semiconductor lasers; surface emitting lasers; 1.5 W; 100 mW; 55 percent; 850 nm; CW operation; GaAs; GaAs VCSEL; conversion efficiency; pulsed operation; top surface emitted output power; vertical-cavity laser diode; Diode lasers; Gallium arsenide; Optical pulses; Power generation; Surface waves; Vertical cavity surface emitting lasers; Wavelength conversion;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645460
