DocumentCode :
319244
Title :
Uniform selectively oxidized 2-dimensional VCSEL arrays for VLSI photonics
Author :
Choquette, Kent D. ; Hou, H.Q. ; Geib, K.M. ; Hammons, B.E.
Author_Institution :
Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
417
Abstract :
To achieve high density vertical cavity surface emitting (VCSEL) laser arrays, the material system and device structure must be optimized. Here we employ strain-balanced In0.27Ga0.73 As quantum wells designed to emit at 1.06 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; oxidation; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 1.06 mum; In0.27Ga0.73As; device structure; high density vertical cavity surface emitting laser; laser transitions; material system; optimized; strain-balanced In0.27Ga0.73As quantum well; uniform selectively oxidized 2D VCSEL arrays; Bonding; Laboratories; Optical arrays; Oxidation; Photonics; Power generation; Semiconductor laser arrays; Thermal management; Vertical cavity surface emitting lasers; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645496
Filename :
645496
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=319244
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