Title :
Band gap tuning of visible laser material
Author :
Hamilton, C.J. ; Kowalski, O.P. ; McIlvaney, K. ; Marsh, J.H. ; Button, C.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Here we report the use of dielectric cap intermixing for bandgap tuning in the AlGaInP material system. Bandgap changes are measured using 77 K photoluminescence. In addition, bandgap shifted lasers fabricated from the intermixed material demonstrate that the intermixing process does not promote dopant diffusion and that the optical quality of the material is retained. To our knowledge this is the first demonstration of a reliable QWI process for the AlGaInP material system
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; laser tuning; optical materials; photoluminescence; quantum well lasers; 77 K; AlGaInP; AlGaInP material system; band gap tuning; bandgap shifted lasers; dielectric cap intermixing; dopant diffusion; intermixed material; optical quality; photoluminescence; reliable QWI process; visible laser material; Dielectric materials; Diode lasers; Laser tuning; Optical materials; Optical waveguides; Photoluminescence; Photonic band gap; Quantum well lasers; Rapid thermal annealing; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645512
