• DocumentCode
    3192624
  • Title

    Analytical Noise-Rejection Model Based on Short Channel MOSFET

  • Author

    Jain, Vinay ; Zarkesh-Ha, Payman

  • Author_Institution
    Indian Inst. of Technol., Kanpur
  • fYear
    2008
  • fDate
    17-19 March 2008
  • Firstpage
    401
  • Lastpage
    406
  • Abstract
    Due to scaling down of semiconductor technology, modern deep-submicron VLSI circuits are becoming increasingly vulnerable to noise from multiple sources, including cross-talk, radiation-induced single event transient, and power supply noises. Noise Rejection Curve (NRC) has been used as a metric to model noise susceptibility of logic circuits to such sources. In this paper an analytical model for NRC, which includes short channel effects, is presented. The model uses only basic SPICE parameters and does not include any calibration parameter. Comparison with SPICE simulations using TSMC 0.25 um CMOS process parameters, suggests that the proposed model can accurately predict NRC characteristic of variety of logic circuits.
  • Keywords
    CMOS integrated circuits; MOSFET; SPICE; VLSI; logic circuits; semiconductor technology; SPICE simulations; TSMC CMOS process parameters; analytical noise rejection; deep-submicron VLSI circuits; logic circuits; noise susceptibility; semiconductor technology; short channel MOSFET; size 0.25 mum; Analytical models; Circuit noise; Crosstalk; Logic circuits; MOSFET circuits; Predictive models; SPICE; Semiconductor device modeling; Semiconductor device noise; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-0-7695-3117-5
  • Type

    conf

  • DOI
    10.1109/ISQED.2008.4479765
  • Filename
    4479765