DocumentCode
3192624
Title
Analytical Noise-Rejection Model Based on Short Channel MOSFET
Author
Jain, Vinay ; Zarkesh-Ha, Payman
Author_Institution
Indian Inst. of Technol., Kanpur
fYear
2008
fDate
17-19 March 2008
Firstpage
401
Lastpage
406
Abstract
Due to scaling down of semiconductor technology, modern deep-submicron VLSI circuits are becoming increasingly vulnerable to noise from multiple sources, including cross-talk, radiation-induced single event transient, and power supply noises. Noise Rejection Curve (NRC) has been used as a metric to model noise susceptibility of logic circuits to such sources. In this paper an analytical model for NRC, which includes short channel effects, is presented. The model uses only basic SPICE parameters and does not include any calibration parameter. Comparison with SPICE simulations using TSMC 0.25 um CMOS process parameters, suggests that the proposed model can accurately predict NRC characteristic of variety of logic circuits.
Keywords
CMOS integrated circuits; MOSFET; SPICE; VLSI; logic circuits; semiconductor technology; SPICE simulations; TSMC CMOS process parameters; analytical noise rejection; deep-submicron VLSI circuits; logic circuits; noise susceptibility; semiconductor technology; short channel MOSFET; size 0.25 mum; Analytical models; Circuit noise; Crosstalk; Logic circuits; MOSFET circuits; Predictive models; SPICE; Semiconductor device modeling; Semiconductor device noise; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
978-0-7695-3117-5
Type
conf
DOI
10.1109/ISQED.2008.4479765
Filename
4479765
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