DocumentCode :
3192675
Title :
Interconnect limits on gigascale integration (GSI)
Author :
Meindl, James D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2001
fDate :
2001
Firstpage :
1
Abstract :
Summary form only given. Throughout the past four decades, silicon semiconductor technology has been advancing at exponential rates in both productivity and performance. In the physical world, such exponential advances cannot continue endlessly. A systematic assessment of early 21st century opportunities for GSI reveals an increasingly troublesome dichotomy. As minimum feature sizes continue to scale to ever smaller dimensions, transistor switching delay diminishes continuously while interconnect latency increases monotonically. The impact of this dichotomy can be moderated significantly by: (1) new materials and processes to reduce interconnect conductor resistivity and insulator permittivity; (2) reverse or smart scaling that optimizes the architecture of a multilevel wiring network to satisfy a complete set of performance specifications; and (3) new chip microarchitectures and instruction set architectures that serve to keep interconnects short and use longer interconnect paths more judiciously. Smart scaling of global interconnects for a system-on-a-chip (SOC) entails an integrated approach to design of the signal, power, and clock distribution networks. The projected performance of a SOC benefits significantly from novel high density, low cost, compliant lead input/output interconnect technology. Finally, 3D structures including multiple levels of transistors and interconnects provide an opportunity for reducing the length of the longest SOC interconnects and hence increasing global clock frequency
Keywords :
ULSI; clocks; delays; dielectric thin films; electrical resistivity; integrated circuit design; integrated circuit interconnections; permittivity; power supply circuits; timing; 3D structures; GSI; IC performance; SOC; SOC interconnects; chip microarchitectures; clock distribution network design; compliant lead input/output interconnect technology; gigascale integration; global clock frequency; global interconnect scaling; instruction set architectures; insulator permittivity; interconnect conductor resistivity; interconnect latency; interconnect length; interconnect limits; interconnect paths; minimum feature size; multilevel wiring network architecture; multiple level interconnects; multiple level transistors; optimization; performance specifications; power distribution network design; productivity; reverse scaling; signal distribution network design; silicon semiconductor technology; smart scaling; system-on-a-chip; transistor switching delay; Clocks; Conducting materials; Conductivity; Delay; Insulation; Power system interconnection; Productivity; Silicon; System-on-a-chip; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
Type :
conf
DOI :
10.1109/PPID.2001.929964
Filename :
929964
Link To Document :
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