Title :
Determination of minority carrier lifetimes in CuInSe2 solar cell absorbers
Author :
Puech, K. ; Zott, S. ; Leo, K. ; Ruckh, M. ; Schock, H.-W.
Author_Institution :
Inst. fur Angewandte Photophys., Tech. Univ. Dresden, Germany
Abstract :
The authors present the first measurements of minority carrier lifetimes, using time resolved photoluminescence, in polycrystalline CuInSe2 (CISe) thin film solar cells, grown with a gradient in the Cu-In ratio. The gradient enables a continuous evaluation of lifetime dependence on film composition. Luminescence at two distinct spectral positions is observed. The first, high energy emission, which is attributed to free carrier or free exciton recombination (depending on composition), decays extremely fast with a lifetime of tens of picoseconds. The second, lower energy emission, is thought to originate from defect related recombinations and decays much more slowly with typical lifetimes greater than tens of nanoseconds. They compare these results with results from CuIn0.92Ga0.08Se2 (CIGSe) films
Keywords :
carrier lifetime; copper compounds; electron-hole recombination; indium compounds; minority carriers; photoluminescence; semiconductor device testing; semiconductor thin films; solar cells; ternary semiconductors; Cu-In ratio gradient; CuIn0.92Ga0.08Se2; CuInSe2; CuInSe2 solar cells; defect related recombinations; energy emission; free carrier recombination; free exciton recombination; minority carrier lifetimes; polycrystalline thin-film semiconductors; spectral position; time-resolved photoluminescence; Cameras; Energy resolution; Excitons; Infrared detectors; Luminescence; Photoluminescence; Photovoltaic cells; Pulse measurements; Radiative recombination; Time measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564263
