• DocumentCode
    3192745
  • Title

    Determination of minority carrier lifetimes in CuInSe2 solar cell absorbers

  • Author

    Puech, K. ; Zott, S. ; Leo, K. ; Ruckh, M. ; Schock, H.-W.

  • Author_Institution
    Inst. fur Angewandte Photophys., Tech. Univ. Dresden, Germany
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    857
  • Lastpage
    860
  • Abstract
    The authors present the first measurements of minority carrier lifetimes, using time resolved photoluminescence, in polycrystalline CuInSe2 (CISe) thin film solar cells, grown with a gradient in the Cu-In ratio. The gradient enables a continuous evaluation of lifetime dependence on film composition. Luminescence at two distinct spectral positions is observed. The first, high energy emission, which is attributed to free carrier or free exciton recombination (depending on composition), decays extremely fast with a lifetime of tens of picoseconds. The second, lower energy emission, is thought to originate from defect related recombinations and decays much more slowly with typical lifetimes greater than tens of nanoseconds. They compare these results with results from CuIn0.92Ga0.08Se2 (CIGSe) films
  • Keywords
    carrier lifetime; copper compounds; electron-hole recombination; indium compounds; minority carriers; photoluminescence; semiconductor device testing; semiconductor thin films; solar cells; ternary semiconductors; Cu-In ratio gradient; CuIn0.92Ga0.08Se2; CuInSe2; CuInSe2 solar cells; defect related recombinations; energy emission; free carrier recombination; free exciton recombination; minority carrier lifetimes; polycrystalline thin-film semiconductors; spectral position; time-resolved photoluminescence; Cameras; Energy resolution; Excitons; Infrared detectors; Luminescence; Photoluminescence; Photovoltaic cells; Pulse measurements; Radiative recombination; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564263
  • Filename
    564263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3192745