Title :
Gate oxide damage: a brief history and a look ahead
Author :
Gabriel, Calvin T.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
The tendency for glass to break under stress has been an annoying problem for centuries. Perhaps it is not surprising that today, with gate oxides mere monolayers thick and the plasma environment a veritable chamber of horrors, we are still struggling to prevent damage. This paper provides a brief history of gate oxide damage in the modern era of plasma processing, reviewing key discoveries and industry trends. It concludes with a look ahead - a speculative projection of where these trends and new developments might be taking us
Keywords :
CMOS integrated circuits; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; plasma materials processing; reviews; sputter etching; surface charging; technological forecasting; SiO2-Si; damage prevention; gate oxide damage; gate oxides; monolayer thickness; plasma environment; plasma processing; stress; Electrons; Etching; History; MOSFETs; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929969
