DocumentCode
3192787
Title
Characterization of CF4 plasma induced damage during dry ashing and residue removal process
Author
Wang, L.S. ; Wei, P.C. ; Chan, T.S. ; Chang, T.S. ; Yen, C.L. ; Yang, W.C. ; Kuan, H.
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
fYear
2001
fDate
2001
Firstpage
29
Lastpage
32
Abstract
As devices get into deep sub-micron generations, more than 25 photoresist steps are basic process requirements. More complex S/D engineering implants must be optimized for both core device and I/O device performances. In addition, for photoresist stripping, ashing technology has become a critical issue for high dose implant layers to completely remove carbonized PR residue. Adding fluorine-based gases like CF4 during the ashing process (high dose implant layer) can effectively improve photoresist stripping capability but will lose some device performance. In this work, we discuss the CF4 impact on the dielectric integrity of the gate oxide and increased nonsilicide poly resistance
Keywords
dielectric thin films; integrated circuit technology; ion implantation; organic compounds; photoresists; plasma materials processing; sputter etching; surface contamination; S/D engineering implants; SiO2-Si; ashing process; ashing technology; carbonized PR residue; device performance; dielectric integrity; dry ashing; fluorine-based gases; gate oxide; high dose implant layers; nonsilicide poly resistance; photoresist steps; photoresist stripping; photoresist stripping capability; residue removal process; tetrafluoromethane plasma induced damage; Ash; Implants; MOS capacitors; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Plasma sources; Resists; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-9651577-5-X
Type
conf
DOI
10.1109/PPID.2001.929971
Filename
929971
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