Generation of 10-Gbit/s Optical Millimeter-Wave Signal using a 125-GHz Mode-Locked Laser Diode Integrated with an Electro-Absorption Modulator

Author

Nakajima, Fumito ; Ohno, Tetsuichiro ; Yoshino, Kaoru ; Furuta, Tomofumi ; Sato, Tomonari ; Kondo, Yasuhiro ; Ito, Hiroshi

Author_Institution

NTT Photonics Laboratories, NTT Corporation. 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan TEL:+81-46-240-3236, FAX:+81-46-240-4306, e-mail: nfumito@aecl.ntt.co.jp

fYear

2005

fDate

12-14 Oct. 2005

Firstpage

33

Lastpage

36

Abstract

We fabricated a compact optical millimeter-wave (MMW) transmitter by monolithically integrating an active mode-locked laser diode (MLLD) and high-mesa electro-absorption (EA) modulators. From the frequency domain measurements of the 125-GHz optical MMW signal, we obtained a linewidth of less than 10 Hz and a timing jitter of 0.1 ps. As for the integrated EA modulator, a high extinction ratio (20 dB) and a large 3-dB-down bandwidth (16 GHz) were achieved by employing high-mesa waveguide structure buried with polyimide. In bit-error-rate measurements of the 10-Gbit/s MMW signal generated using the optical MMW transmitter, error-free operation was achieved.

Keywords

EA modulator; Semiconductor mode-locked laser diode; millimeter-wave; transmitter; Diode lasers; Frequency domain analysis; Frequency measurement; Integrated optics; Millimeter wave measurements; Optical modulation; Optical transmitters; Optical waveguides; Signal generators; Timing jitter; EA modulator; Semiconductor mode-locked laser diode; millimeter-wave; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2005. MWP 2005. International Topical Meeting on

Print_ISBN

89-950043-3-9

Type

conf

DOI

10.1109/MWP.2005.203534

Filename

1590262