Title :
In-line plasma induced charging monitor for 0.15 μm polysilicon gate etching
Author :
Chong, Daniel ; Yoo, Won Jong ; Ang, Ting Cheong ; Loong, Sang Yee ; Cha, Randall ; Lee, Pin Hian ; Layadi, Nace ; Chan, Lap ; See, Alex
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Plasma induced charging damage from polysilicon gate etch was studied using both end-of-line polysilicon antenna test structures and in-line surface potential measurement (SPM) techniques. This study is performed on a 0.15 μm gate patterning process using two different polysilicon etch chambers. In the study, the standard deviation and range of surface potentials obtained from the SPM technique show the same trend as those of threshold voltages obtained from polysilicon antenna test structures. The SPM technique could be used as an add-on method to antenna test structures for monitoring plasma induced charging damage
Keywords :
elemental semiconductors; integrated circuit measurement; integrated circuit testing; plasma materials processing; process monitoring; silicon; sputter etching; surface charging; surface potential; 0.15 micron; SPM technique; Si; antenna test structures; end-of-line polysilicon antenna test structures; gate patterning process; in-line plasma induced charging monitor; in-line surface potential measurement; monitoring; plasma induced charging damage; polysilicon antenna test structures; polysilicon etch chambers; polysilicon gate etch; polysilicon gate etching; standard deviation; surface potentials; threshold voltages; Design for manufacture; Electrodes; Etching; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma temperature; Scanning probe microscopy;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929977
