Title :
The impact of plasma charging damage on the RF performances of deep-submicron silicon MOSFET
Author :
Pantisano, L. ; Cheung, K.P. ; Smith, P. ; Chen, C.Y. ; Hwang, D. ; Fiorillo, S. ; Keller, R. ; Paccagnella, A.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
Plasma charging damage impact on the performance of deep submicron MOSFETs has investigated for the first time. Annealing of defects created by charging damage is found to be progressively improved with temperature. At 400°C, annealing is complete for both the DC and RF parameters but not thin oxide breakdown reliability
Keywords :
CMOS integrated circuits; MOSFET; annealing; microwave field effect transistors; plasma materials processing; semiconductor device reliability; semiconductor device testing; surface treatment; 400 C; DC parameters; MOSFET; MOSFET performance; RF parameters; RF performance; anneal temperature; defect annealing; plasma charging damage; thin oxide breakdown reliability; Annealing; Degradation; MOSFET circuits; Plasma measurements; Plasma properties; Plasma simulation; Plasma temperature; Radio frequency; Silicon; Stress;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929978
