Title :
InGaAs LDMOS power semiconductor device performances
Author :
Liu, Yidong ; Yuan, Jiann-shiun ; Steighner, Jason
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron × Qg over its silicon counterpart.
Keywords :
III-V semiconductors; alumina; dielectric materials; gallium arsenide; indium compounds; power MOSFET; semiconductor device models; Al2O3; In0.65Ga0.35As-Al2O3; LDMOS power semiconductor device; breakdown voltage; gate charge; gate dielectric; n-channel LDMOS; specific on-resistance; two-dimensional device simulation; Aluminum oxide; Capacitance; Computer science; Dielectric devices; Indium gallium arsenide; Lead compounds; Power electronics; Power semiconductor devices; Silicon; USA Councils; LDMOS on-resistance; breakdown voltage; gate charge;
Conference_Titel :
Power Electronics and Drive Systems, 2009. PEDS 2009. International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4166-2
Electronic_ISBN :
978-1-4244-4167-9
DOI :
10.1109/PEDS.2009.5385692
