• DocumentCode
    3192929
  • Title

    InGaAs LDMOS power semiconductor device performances

  • Author

    Liu, Yidong ; Yuan, Jiann-shiun ; Steighner, Jason

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2009
  • fDate
    2-5 Nov. 2009
  • Firstpage
    1047
  • Lastpage
    1049
  • Abstract
    An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron × Qg over its silicon counterpart.
  • Keywords
    III-V semiconductors; alumina; dielectric materials; gallium arsenide; indium compounds; power MOSFET; semiconductor device models; Al2O3; In0.65Ga0.35As-Al2O3; LDMOS power semiconductor device; breakdown voltage; gate charge; gate dielectric; n-channel LDMOS; specific on-resistance; two-dimensional device simulation; Aluminum oxide; Capacitance; Computer science; Dielectric devices; Indium gallium arsenide; Lead compounds; Power electronics; Power semiconductor devices; Silicon; USA Councils; LDMOS on-resistance; breakdown voltage; gate charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Drive Systems, 2009. PEDS 2009. International Conference on
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-4166-2
  • Electronic_ISBN
    978-1-4244-4167-9
  • Type

    conf

  • DOI
    10.1109/PEDS.2009.5385692
  • Filename
    5385692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3192929