Title :
Hot carrier lifetime and dielectric breakdown in MOSFETs processed with deuterium
Author :
Clark, W.F. ; Cartier, E. ; Wu, E.Y.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
We compare the transistor hot-electron lifetime improvements to capacitor charge-to-breakdown and time-to-breakdown results of MOS structures incorporating deuterium. Concentration dependent models are proposed for both mechanisms to account for apparent lack of observed dielectric breakdown improvement on samples with significant hot-electron improvement. A hydrogen/deuterium replacement model is proposed
Keywords :
MOSFET; deuterium; hot carriers; passivation; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; semiconductor device testing; D; MOS structures; MOSFETs; SiO2-Si; capacitor charge-to-breakdown; concentration dependent models; deuterium; deuterium passivation; dielectric breakdown; hot carrier lifetime; hydrogen/deuterium replacement model; time-to-breakdown; transistor hot-electron lifetime; Annealing; Bonding; Breakdown voltage; Deuterium; Dielectric breakdown; Electric breakdown; Electrons; Hot carriers; MOSFETs; Stress;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929984
