• DocumentCode
    3192977
  • Title

    Exciton-polariton laser diodes

  • Author

    Schneider, C. ; Kim, N.Y. ; Rahimi-Iman, A. ; Nitsche, W.H. ; Lermer, M. ; Kamp, M. ; Reitzenstei, S. ; Worschech, L. ; Höfling, S. ; Yamamoto, Y. ; Forchel, A.

  • Author_Institution
    Wilhelm-Conrad-Rontgen-Res. Centre for Complex Mater. Syst., Univ. Wurzburg, Würzburg, Germany
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the active region allow to preserve the strong coupling regime between excitons and photons across the threshold of polariton lasing.
  • Keywords
    distributed Bragg reflector lasers; excitons; laser cavity resonators; micro-optics; microcavities; polaritons; semiconductor lasers; current injection; exciton-polariton laser diodes; high quality factor doped distributed Bragg reflector microcavities; quantum wells; strong coupling regime; Cavity resonators; Diode lasers; Distributed Bragg reflectors; Laser excitation; Microcavities; Q factor; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642642
  • Filename
    5642642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3192977