Reliability study on polycrystalline silicon thin film resistors used in LSIs under thermal and electrical stress

Author

Akimori, Hiroko ; Owada, Nobuo ; Taneoka, Tadayuki ; Uda, Hizuru

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1990

fDate

27-29 March 1990

Firstpage

276

Lastpage

280

Abstract

A general expression for the sheet resistivity increase of polycrystalline silicon (poly-Si) resistors formed on field oxide under thermal and electrical stress is determined. The increase ratio of the resistivity under thermal stress is proportional to its initial value and square root of aging time with the activation energy of 0.68+or-0.22 eV. The increase ratio of the resistivity under constant DC current is also proportional to the square root of testing time, indicating that this increase is due to the effect of the above-mentioned thermal stress. Carrier trapping center generation is the poly-Si film caused by contact metallization is proposed for this phenomenon.<>

Keywords

ageing; elemental semiconductors; environmental testing; large scale integration; metallisation; reliability; semiconductor thin films; silicon; thin film resistors; LSI; activation energy; aging time; carrier trapping centre generation; constant DC current; contact metallization; electrical stress; field oxide; increase ratio; polycrystalline Si resistors; polysilicon resistors; reliability tests; sheet resistivity increase; thermal stress; thin film resistors; Aging; Conductivity; Genetic expression; Metallization; Resistors; Semiconductor thin films; Silicon; Testing; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66100

Filename

66100