Title :
GaN-based distributed-feedback surface-emitting laser with embedded two-dimensional photonic crystal fabricated by mass-transport technique
Author :
Nagatomo, Yasuhiro ; Kawashima, Shoichi ; Kawashima, Takeshi ; Hori, Yuichiro ; Iwase, Hideo ; Uchida, Takeshi ; Numata, Aihiko ; Hoshino, Katsuyuki ; Uchida, Mamoru
Author_Institution :
Opt. Technol. Dev. Center, Canon Inc., Tokyo, Japan
Abstract :
We report on GaN-based distributed-feedback surface-emitting lasers on a sapphire substrate. Two-dimensional photonic crystal gratings in our device were embedded into GaN-based structures by mass-transport phenomena. We have observed room-temperature pulsed lasing at 406.0 nm.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; photonic crystals; sapphire; substrates; surface emitting lasers; GaN; distributed-feedback surface-emitting laser; embedded two-dimensional photonic crystal; mass-transport technique; room-temperature pulsed lasing; sapphire substrate; Epitaxial growth; Gratings; Optical imaging; Optical refraction; Optical variables control; Photonic crystals; Surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642649
