Title :
202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser
Author :
Fedorova, K.A. ; Cataluna, M.A. ; Krestnikov, I. ; Livshits, D. ; Rafailov, E.U.
Author_Institution :
Photonics & Nanosci. Group, Univ. of Dundee, Dundee, UK
Abstract :
Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; InAs-GaAs; broadly tunable high-power external cavity; continuous tuning; high power external-cavity quantum-dot laser; power 455 mW; tuning range; Gallium arsenide; Laser tuning; Optical waveguides; Photonics; Power generation; Temperature distribution;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642655
