Title :
Effect of carrier transport on modulation bandwidth of 1.3-µm InAs/GaAs self-assembled quantum-dot lasers
Author :
Ishida, Mitsuru ; Tanaka, Yu ; Takada, Kan ; Yamamoto, Tsuyoshi ; Song, Hai-Zhi ; Nakata, Yoshiaki ; Yamaguchi, Masaomi ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution :
Inst. of Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
Abstract :
We newly modeled the modulation bandwidth of 1.3-μm quantum-dot lasers and analyzed experimental results. The carrier transport through the active layers was found to affect significantly the modulation bandwidth with increasing stacking-number of quantum-dot layers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; self-assembly; transport processes; InAs-GaAs; carrier transport; modulation bandwidth; quantum dot layer; self assembled quantum dot lasers; Analytical models; Bandwidth; Laser modes; Modulation; Quantum dot lasers; Stacking;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642656
