DocumentCode
3193217
Title
Effect of carrier transport on modulation bandwidth of 1.3-µm InAs/GaAs self-assembled quantum-dot lasers
Author
Ishida, Mitsuru ; Tanaka, Yu ; Takada, Kan ; Yamamoto, Tsuyoshi ; Song, Hai-Zhi ; Nakata, Yoshiaki ; Yamaguchi, Masaomi ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution
Inst. of Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
174
Lastpage
175
Abstract
We newly modeled the modulation bandwidth of 1.3-μm quantum-dot lasers and analyzed experimental results. The carrier transport through the active layers was found to affect significantly the modulation bandwidth with increasing stacking-number of quantum-dot layers.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; self-assembly; transport processes; InAs-GaAs; carrier transport; modulation bandwidth; quantum dot layer; self assembled quantum dot lasers; Analytical models; Bandwidth; Laser modes; Modulation; Quantum dot lasers; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642656
Filename
5642656
Link To Document