• DocumentCode
    3193228
  • Title

    Copper wetting of two-dimensional silicates: robust barriers for interconnect applications

  • Author

    Zhao, X. ; Leavy, M. ; Magtoto, N. ; Kelber, J.A.

  • Author_Institution
    Dept. of Chem., North Texas Univ., Denton, TX, USA
  • fYear
    2001
  • fDate
    6-6 June 2001
  • Firstpage
    6
  • Lastpage
    8
  • Abstract
    A critical issue in Cu/low-k integration is the wetting and adhesion of Cu to the barrier substrate. The data reported here demonstrate that the oxidation of a thin Ta film on SiO 2 results in the formation of a thin (∼6 Å) silicate-like film which displays excellent wettability towards Cu at 300 K.
  • Keywords
    adhesion; copper; integrated circuit interconnections; wetting; 300 K; Cu/low-k integration; adhesion; interconnects; oxidation; silicate-like film; two-dimensional silicates; wetting; Adhesives; Chemistry; Copper; Degradation; Displays; Oxidation; Robustness; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    0-7803-6678-6
  • Type

    conf

  • DOI
    10.1109/IITC.2001.930000
  • Filename
    930000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3193228