Defect reduction of copper BEOL for advanced ULSI interconnect

Author

Chen, Hsueh-Chung ; Tsai, Teng-Chun ; Huang, Yi-Min ; Huang, Chao-Hui ; Chen, Chien-Hung ; Wei, Yung-Tsung ; Yang, Ming-Sheng ; Wu, Juan-Yuan ; Yew, Tri-Rung ; Chen, Jen-Kon

Author_Institution

United Microelectron. Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

21

Lastpage

23

Abstract

In this paper, a full discussion of the defect reduction in copper BEOL technology of a 1P/3M logic product is presented for the first time. Defectivity is inspected from AEI to CMP on various metal levels. Defectivity is classified into non CMP-related type and CMP-related type. Most of the non-CMP type defects are foreign matter coming from the environment or from the processing residues. They can be effectively removed in a CMP step, as long as they were not trapped in the metal trench. On the other hand, the CMP-related type defects impact the consecutive process and yield significantly. Examples of the killer defects are slurry residues, corrosion, and scratching. Prevention and reduction of defects is discussed. Product yield is greatly improved after the reduction of defectivity.

Keywords

ULSI; chemical mechanical polishing; copper; integrated circuit interconnections; 1P/3M logic product; BEOL technology; CMP step; Cu; advanced ULSI interconnects; corrosion; defect reduction; killer defects; processing residues; scratching; slurry residues; Atherosclerosis; Chemical processes; Chemical vapor deposition; Copper; Corrosion; Dielectric materials; Inspection; Microelectronics; Slurries; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930004

Filename

930004