Title :
Defect reduction of copper BEOL for advanced ULSI interconnect
Author :
Chen, Hsueh-Chung ; Tsai, Teng-Chun ; Huang, Yi-Min ; Huang, Chao-Hui ; Chen, Chien-Hung ; Wei, Yung-Tsung ; Yang, Ming-Sheng ; Wu, Juan-Yuan ; Yew, Tri-Rung ; Chen, Jen-Kon
Author_Institution :
United Microelectron. Corp., Hopewell Junction, NY, USA
Abstract :
In this paper, a full discussion of the defect reduction in copper BEOL technology of a 1P/3M logic product is presented for the first time. Defectivity is inspected from AEI to CMP on various metal levels. Defectivity is classified into non CMP-related type and CMP-related type. Most of the non-CMP type defects are foreign matter coming from the environment or from the processing residues. They can be effectively removed in a CMP step, as long as they were not trapped in the metal trench. On the other hand, the CMP-related type defects impact the consecutive process and yield significantly. Examples of the killer defects are slurry residues, corrosion, and scratching. Prevention and reduction of defects is discussed. Product yield is greatly improved after the reduction of defectivity.
Keywords :
ULSI; chemical mechanical polishing; copper; integrated circuit interconnections; 1P/3M logic product; BEOL technology; CMP step; Cu; advanced ULSI interconnects; corrosion; defect reduction; killer defects; processing residues; scratching; slurry residues; Atherosclerosis; Chemical processes; Chemical vapor deposition; Copper; Corrosion; Dielectric materials; Inspection; Microelectronics; Slurries; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930004