Title :
An Ultra-wideband Transceiver Front-end in SiGe: C BiCMOS Technology
Author :
Datta, Prabir Kumar ; Fan, Xi ; Fischer, Gunter
Author_Institution :
IHP-Microelectron.
Abstract :
An integrated pulse based ultra-wideband (UWB) transceiver front-end is presented in this paper. The pulse generator produces Gaussian modulated pulses satisfying FCC spectral mask with possibility for BPSK modulation. The generated pulses have a bandwidth of 2 GHz from 3.1-5.1 GHz. The receiver front-end is consisting of an UWB LNA. Transmit and receive paths are chosen by transmit/receive (T/R) switch. The pulse generator, T/R switch and the LNA are integrated on a single chip and fabricated using 0.25 mum SiGe:C BiCMOS technology. The integrated circuit components are designed fully differential. The off-chip antenna and band-pass filter are single ended and connected to the T/R switch through a hybrid coupler
Keywords :
BiCMOS integrated circuits; low noise amplifiers; phase shift keying; transceivers; ultra wideband communication; 0.25 micron; 2 GHz; 3.1 to 5.1 GHz; BPSK modulation; BiCMOS technology; FCC spectral mask; Gaussian modulated pulses; SiGe:C; UWB LNA; band-pass filter; hybrid coupler; integrated circuit component; integrated pulse; off-chip antenna; ultra-wideband transceiver front-end; BiCMOS integrated circuits; Binary phase shift keying; FCC; Germanium silicon alloys; Pulse generation; Pulse modulation; Silicon germanium; Switches; Transceivers; Ultra wideband technology;
Conference_Titel :
Ultra-Wideband, The 2006 IEEE 2006 International Conference on
Conference_Location :
Waltham, MA
Print_ISBN :
1-4244-0101-1
Electronic_ISBN :
1-4244-0102-X
DOI :
10.1109/ICU.2006.281534
