Title :
Characterization of electroless copper as a seed layer for sub-0.1 /spl mu/m interconnects
Author :
Gandikota, S. ; McGuirk, C. ; Padhi, D. ; Parikh, S. ; Chen, J. ; Malik, A. ; Dixit, G.
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
Complete gapfill of 0.1 μm features with electroless Cu seed layers and electroplated Cu was demonstrated. Electrical tests on test structures indicated similar line and via chain resistance, yield and line-to-line leakage current on wafers with electroless Cu seed and PVD Cu seed layers filled with electroplated Cu.
Keywords :
copper; electroless deposition; integrated circuit interconnections; Cu; electrical tests; electroless Cu seed layers; gapfill; leakage current; via chain resistance; yield; Atherosclerosis; Chemical elements; Copper; Electron traps; Microstructure; Sputtering; Substrates; Transistors; X-ray diffraction; X-ray imaging;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930007
