Title :
Singlemode Monolithically Quantum-Dot Vertical-Cavity Surface-Emitting Laser in 1.3 μm with Side-mode Suppression ratio & gt; 30dB
Author :
Kuo, H.C. ; Lin, G. ; Tsai, W.K. ; Chang, Y.H. ; Peng, P.C. ; Lai, F. ; Yu, H.C. ; Yang, H.P. ; Lin, K.F. ; Chi, J.Y.
Author_Institution :
Department of Photonics and Institute of Electro-optical Engineering, National Chiao-Tung University, Hsin-Tsu 300, Taiwan, R. O. C.
Abstract :
We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is ∼330 μW with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB. Modulation bandwidth was also presented for the first time.
Keywords :
bandwidth; quantum dots; single mode; surface emitting laser; Gallium arsenide; Laser modes; Optical fiber communication; Optical surface waves; Power generation; Quantum dots; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers; bandwidth; quantum dots; single mode; surface emitting laser;
Conference_Titel :
Microwave Photonics, 2005. MWP 2005. International Topical Meeting on
Conference_Location :
Seoul, Korea
Print_ISBN :
89-950043-3-9
DOI :
10.1109/MWP.2005.203563
