Title :
Characterization of methyl-doped silicon oxide film for inter-layer dielectrics application
Author :
Cui, Hao ; Lu, Hongqiang ; Bhat, Ishwara ; Murarka, S. ; Lanford, Williams ; Li, Weidan
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
In this work, methyl-doped silicon oxide films deposited using Flowfill TM chemical vapor deposition (CVD) have been characterized for use in inter-layer dielectrics (ILD) application. Films with different methyl contents were studied to understand the effects of incorporated methyl groups on the properties. Chemical composition and bonding structure, dielectric constant (k), refractive index (RI), density, thermal stability, moisture permeability, and hardness were investigated. Chemical mechanical polishing (CMP) of these films and their stability under O 2, N 2 and H 2 plasma treatments were also studied.
Keywords :
bonds (chemical); chemical mechanical polishing; chemical vapour deposition; density; dielectric thin films; hardness; moisture; organic compounds; permeability; permittivity; plasma materials processing; refractive index; silicon compounds; stoichiometry; thermal stability; CMP; Flowfill chemical vapor deposition; H/sub 2/; H/sub 2/ plasma treatment; ILD application; N/sub 2/; N/sub 2/ plasma treatment; O/sub 2/; O/sub 2/ plasma treatment; SiO/sub 2/; bonding structure; chemical composition; chemical mechanical polishing; density; dielectric constant; hardness; inter-layer dielectrics application; methyl contents; methyl-doped silicon oxide film; moisture permeability; refractive index; stability; thermal stability; Bonding; Chemical vapor deposition; Dielectric constant; Dielectric films; Optical films; Plasma stability; Refractive index; Semiconductor films; Silicon; Thermal stability;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930012
