Fast Modeling of 3D-Optical Carriers Injection and Permittivity in semiconductor substrate

Author

Gary, René ; Arnould, Jean-Daniel ; Perron, Alexandre ; Pananakakis, Georges ; Vilcot, Anne

Author_Institution

IMEP, UMR 5130 CNRS/INPG/UJF, 23 rue des martyrs, BP257, F-38016 Grenoble Cedex1, FRANCE Phone: +33 4 76 85 60 13, Fax: +33 4 76 85 60 80, Email: gary@enserg.fr

fYear

2005

fDate

12-14 Oct. 2005

Firstpage

169

Lastpage

172

Abstract

In order to be faster and more precise than numerical way in the computation of the photo-induced plasma in semiconductor, we have to use an analytical approach to solve the problem. In this study, we use the Hankel transform to simplify the resolution of the differential equation of second order with non-constant coefficients, known as the diffusion equations. As a result, we obtain the 3-Dimension carrier density based on all the physical parameters of the substrate and of the laser beam. We are thus able to study the sensibility to optical power and then to compute the complex dielectric constant of the photo-induced plasma.

Keywords

3D resolution; Hankel transforms; optical control; photo-induced; Charge carrier density; Dielectric substrates; Differential equations; Laser beams; Laser theory; Optical computing; Optical sensors; Permittivity; Plasma density; Transforms; 3D resolution; Hankel transforms; optical control; photo-induced;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2005. MWP 2005. International Topical Meeting on

Print_ISBN

89-950043-3-9

Type

conf

DOI

10.1109/MWP.2005.203566

Filename

1590294