Nanoglass/sup TM/ E copper damascene processing for etch, clean, and CMP

Author

Zhang, F. ; Leonte, O. ; Chen, Z.J. ; Jin, L. ; Levert, J.A. ; Camarena, A. ; Daniels, B. ; Dunne, J. ; Nguyen, T. ; Ramos, T.A. ; Thanawala, S.

Author_Institution

Electron. Mater. Star Center, Honeywell Inc., Sunnyvale, CA, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

57

Lastpage

59

Abstract

The drive for greater integrated circuit performance has led to the need for faster interconnect systems and the development of porous ultra low k dielectrics. The porous structure and lower modulus has made integration a greater challenge. Nanoglass^TM E is one such spin-on dielectric that has been optimized for this challenge. In this study, Nanoglass^TM E dielectric copper single level Damascene integration has been successfully demonstrated. Direct CMP tests of Nanoglass^TM E blanket films have demonstrated damage free polishing with 7 psi downforce.

Keywords

chemical mechanical polishing; copper; dielectric thin films; etching; integrated circuit interconnections; integrated circuit metallisation; nanostructured materials; polymer films; porous materials; surface cleaning; CMP; Cu; Nanoglass E copper damascene processing; blanket films; clean; copper single level damascene integration; damage free polishing; direct CMP tests; downforce; etch; integrated circuit performance; interconnect systems; porous structure; porous ultra low k dielectrics; siloxane polymer; spin-on dielectric; Ash; Chemical processes; Cleaning; Copper; Dielectric measurements; Dielectric substrates; Etching; Optical films; Scanning electron microscopy; Solvents;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930016

Filename

930016