Rapid thermal annealing of Be implanted GaAs

Author

Lu, Y.C. ; Kalkur, T.S. ; De Araujo, C. A Paz

Author_Institution

Microelectron. Res. Labs., Colorado Univ., Colorado Springs, CO, USA

fYear

1988

fDate

21-23 March 1988

Firstpage

73

Abstract

Rapid thermal annealing is used to activate shallow-Be-implanted in GaAs. A proximity annealing technique is used which minimizes As evaporation. Because the substrate is left capless during annealing, surface interaction with the cap and interfacial stress are relieved. Surface morphology and Be redistribution during annealing are analyzed by scanning electron microscopy and secondary ion mass spectroscopy, respectively. Electrical characterization of the activated implant is achieved by means of a rapid thermally alloyed Au-Zn-Au contact using Van der Pauw patterns and the transmission line method. Nearly 100% implant activation and ohmic contacts are achieved.<>

Keywords

III-V semiconductors; annealing; beryllium; gallium arsenide; impurity distribution; impurity electron states; ion implantation; ohmic contacts; scanning electron microscope examination of materials; secondary ion mass spectra; semiconductor technology; semiconductor-metal boundaries; As evaporation; Be redistribution; GaAs:Be; III-V semiconductors; Van der Pauw patterns; cap; implant activation; interfacial stress; ohmic contacts; rapid thermal annealing; rapid thermally alloyed Au-Zn-Au; scanning electron microscopy; secondary ion mass spectroscopy; surface interaction; surface morphology; transmission line method; Etching; Furnaces; Gallium arsenide; Implants; Impurities; Rapid thermal annealing; Scanning electron microscopy; Steady-state; Surface morphology; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'

Conference_Location

Colorado Springs, CO, USA

Type

conf

DOI

10.1109/REG5.1988.15903

Filename

15903