High performance millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias

Author

Hur, K.Y. ; McTaggart, R.A. ; Ventresca, M.P. ; Wohlert, R. ; Aucoin, L.M. ; Kazior, Thomas E.

Author_Institution

Adv. Device Center, Raytheon Co., Lexington, MA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

465

Abstract

Millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias and end source vias have been fabricated and characterized. Although DC IV characteristics of the HEMTs with individually grounded source finger vias and end source vias were similar, RF measurements yielded higher small signal gain on the HEMT with individually grounded source finger vias. Power measurements at 44 GHz further revealed that the HEMT with individually grounded source finger vias produced higher output power, power added efficiency, and associated gain compared to the HEMT with end source vias.<>

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 44 GHz; AlInAs-GaInAs-InP; DC IV characteristics; RF measurements; end source vias; individually grounded source finger vias; millimeter wave HEMTs; output power; power added efficiency; power measurements; small signal gain; Fingers; Gain measurement; HEMTs; Indium phosphide; MODFETs; Millimeter wave measurements; Power generation; Power measurement; RF signals; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405945

Filename

405945