A noble metallization process using Preferential Metal Deposition (PMD)-aluminum with methylpyrroridine alane (MPA)

Author

Lee, Jong Myeong ; Kim, Byung Hee ; Yun, Ju Young ; Myoung Bum Lee ; Choi, Gil Heyun ; Park, Young Wook ; Shin, Hyun Koock ; Lee, Sang In ; Moon, Joo Tae

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

2001

fDate

6-6 June 2001

Firstpage

72

Lastpage

74

Abstract

A noble Al precursor of methylpyrooridine alane (MPA) showed excellent stabilities and lifetime compared to any other Al precursor. The preferential Metal Deposition (PMD)-Al, which used a CVD-Al process with MPA, showed excellent contact fill and electrical properties, which implied that PMD-Al using MPA can be applied to a ULSI DRAM metallization process, such as metal contact and via holes.

Keywords

CVD coatings; DRAM chips; ULSI; aluminium; integrated circuit metallisation; stability; Al; CVD-Al process; ULSI DRAM metallization process; contact fill properties; electrical properties; metal contacts; methylpyrroridine alane; noble Al precursor; noble metallization process; preferential metal deposition Al; via holes; Bonding; Chemicals; Contacts; Metallization; Optical films; Random access memory; Stability; Substrates; Surface morphology; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930021

Filename

930021