Thermal stress and reliability characterization of barriers for Cu interconnects

Author

Musaka, K. ; Zheng, B. ; Wang, H. ; Wijkekoon, K. ; Chen, L. ; Lin, J. ; Watanabe, K. ; Ohira, K. ; Hosoda, T. ; Miyata, K. ; Hasegawa, T. ; Dixit, G. ; Chueng, R. ; Yamada, M. ; Kadomura, S.

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

83

Lastpage

85

Abstract

MOCVD TiSiN was evaluated as a barrier for Cu interconnects application. The TiSiN film was formed by SiH₄ soaking of MOCVD TiN. The TiSiN film showed improved wetting and adhesion to Cu as well as less stress hysteresis in its integration with Cu. The low stress hysteresis yields higher resistance to Cu void generation during hot storage testing. Electrical tests on DLM Cu test structures demonstrated comparable line and via chain resistance and equivalent line-to-line leakage current in BTS testing compared to conventional PVD Ta(N).

Keywords

adhesion; copper; integrated circuit interconnections; integrated circuit reliability; thermal stresses; voids (solid); wetting; Cu; Cu interconnects; Cu void generation resistance; MOCVD TiN; MOCVD TiSiN barrier; SiH/sub 4/; TiN; TiSiN; adhesion; barrier materials; hot storage testing; leakage current; low stress hysteresis; reliability characterization; stress hysteresis reduction; thermal stress characterization; wetting; Adhesives; Atherosclerosis; Electric resistance; Hysteresis; MOCVD; Semiconductor films; Substrates; Testing; Thermal stresses; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930024

Filename

930024