Title :
Thermal stress and reliability characterization of barriers for Cu interconnects
Author :
Musaka, K. ; Zheng, B. ; Wang, H. ; Wijkekoon, K. ; Chen, L. ; Lin, J. ; Watanabe, K. ; Ohira, K. ; Hosoda, T. ; Miyata, K. ; Hasegawa, T. ; Dixit, G. ; Chueng, R. ; Yamada, M. ; Kadomura, S.
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
MOCVD TiSiN was evaluated as a barrier for Cu interconnects application. The TiSiN film was formed by SiH 4 soaking of MOCVD TiN. The TiSiN film showed improved wetting and adhesion to Cu as well as less stress hysteresis in its integration with Cu. The low stress hysteresis yields higher resistance to Cu void generation during hot storage testing. Electrical tests on DLM Cu test structures demonstrated comparable line and via chain resistance and equivalent line-to-line leakage current in BTS testing compared to conventional PVD Ta(N).
Keywords :
adhesion; copper; integrated circuit interconnections; integrated circuit reliability; thermal stresses; voids (solid); wetting; Cu; Cu interconnects; Cu void generation resistance; MOCVD TiN; MOCVD TiSiN barrier; SiH/sub 4/; TiN; TiSiN; adhesion; barrier materials; hot storage testing; leakage current; low stress hysteresis; reliability characterization; stress hysteresis reduction; thermal stress characterization; wetting; Adhesives; Atherosclerosis; Electric resistance; Hysteresis; MOCVD; Semiconductor films; Substrates; Testing; Thermal stresses; Tin;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930024
