Characterization of thermal stresses of Cu/low-k submicron interconnect structures

Author

Rhee, Seung-Hyun ; Du, Yong ; Ho, Paul S.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

89

Lastpage

91

Abstract

Thermal stress characteristics of damascene processed Cu lines passivated with TEOS and low-k (SiLK) were investigated using an X-ray diffraction method during thermal cycling. Lines with different aspect ratios were studied and the results were compared to that of an Al/low-k structure. The stress characteristics of Cu lines are quite different from those of Al lines, indicating that the diffusion barrier plays an important role in controlling the stress behavior of Cu damascene structures. The effect of low-k passivation and diffusion barrier were quantified according to materials properties. Finite element analysis was performed to verify the X-ray measurements and the results confirm the role of the diffusion barrier in stress behaviors of Cu lines.

Keywords

X-ray diffraction; copper; diffusion barriers; integrated circuit interconnections; passivation; thermal stresses; Cu; Cu/low-k submicron interconnect structures; SiLK; TEOS; X-ray diffraction method; aspect ratios; damascene processed Cu lines; diffusion barrier; finite element analysis; low-k passivation; passivated Cu lines; thermal cycling; thermal stresses; Delay; Dielectric materials; Electromigration; Fabrication; Integrated circuit interconnections; Material properties; Passivation; Stress measurement; Thermal stresses; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930026

Filename

930026