A new failure observation in 0.10-/spl mu/m-wide Cu lines using optical beam induced resistance changes (OBIRCH)

Author

Tagami, M. ; Fukase, T. ; Matsumoto, A. ; Iguchi, M. ; Hayashi, Y. ; Matsubara, Y.

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

2001

fDate

6-6 June 2001

Firstpage

95

Lastpage

97

Abstract

We used an optical beam induced resistance changes (OBIRCH) method to analyze defects in 0.10-μm-wide Cu lines. Narrower lines and higher annealing temperatures strongly increased the defects probably due to Cu film agglomeration in very narrow line trenches. SiC capping of Cu lines reduced the numbers of defects drastically. Capping material is a key factor for 0.10-μm-wide, Cu metallization.

Keywords

annealing; copper; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; 0.1 micron; Cu; Cu film agglomeration; Cu lines; Cu metallization; OBIRCH method; SiC; SiC capping; annealing temperatures; capping material; defects; failure observation; narrow line trenches; optical beam induced resistance changes; Annealing; Electron optics; Lithography; Optical beams; Optical films; Optical microscopy; Scanning electron microscopy; Silicon compounds; Surface resistance; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930028

Filename

930028