Title :
Low temperature solid-liquid interdiffusion wafer and die bonding based on PVD thin Sn/Cu films
Author :
Lemettre, Sylvain ; Seok, Seonho ; Isac, Nathalie ; Moulin, Johan ; Bosseboeuf, Alain
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris Sud, Orsay, France
Abstract :
Formation of Cu-Sn intermetallic compounds has been studied with thin Sn and Cu films deposited by physical vapor deposition. The influence of annealing time at 250°C and 320°C highlights a rapid interdiffusion of copper and tin, leading to the formation of Cu6Sn5 and Cu3Sn phases. Application to 100 mm wafer bonding has been implemented at 250°C and 320°C, which shows that stress induced by the deposits must be controlled to achieve the bonding on the whole wafer surface.
Keywords :
annealing; chemical interdiffusion; copper alloys; metallic thin films; microassembling; solid-liquid transformations; tin alloys; wafer bonding; Cu-Sn intermetallic compounds; Cu3Sn; Cu6Sn5; PVD thin Sn-Cu films; annealing; die bonding; low temperature solid-liquid interdiffusion wafer; physical vapor deposition; rapid interdiffusion; size 100 mm; temperature 250 degC; temperature 320 degC; wafer bonding; Annealing; Bonding; Copper; Films; Joints; Tin; Wafer bonding; Cu-Sn; solid-liquid interdiffusion; solidintermettalic; transient liquid phase; wafer bonding;
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2015 Symposium on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-8627-9
DOI :
10.1109/DTIP.2015.7160993
