Title :
High efficiency small size 6 W class AB X-band power amplifier module using a novel MBE GaAs FET
Author :
Avasarala, M. ; Day, D.S. ; Chan, S. ; Gregory, P. ; Basset, J.R.
Author_Institution :
Avantek Inc., Santa Clara, CA, USA
Abstract :
A high-efficiency, 7.2 mm GaAs power FET is described that uses a novel doping profile grown by molecular-beam epitaxy. This FET has achieved greater than 7-dB gain and 35.3-dBm power operating in class AB mode with a power-added-efficiency (PAE) of 40% at 10.2 GHz. Extremely compact single- and two-stage balanced amplifier modules were developed achieving power, gain, and PAEs of 37.7 dBm, 6.7 dB, and 34.8% for the single stage and 37.7 dBm, 15.1 dB, and 33.1% for the double stage at 1- and 2-dB gain compression points, respectively, across the 9.2-10.2-GHz band with good gain flatness and output return loss. The total two-stage amplifier was realized on a carrier measuring only 0.700 in. by 0.280 in. by using high-dielectric-constant substrates for all the matching circuits. The values for the PAE remained relatively constant with flange temperatures up to 75 degrees C.<>
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; molecular beam epitaxial growth; power amplifiers; solid-state microwave circuits; 33.1 to 40 percent; 6 W; 6.7 to 15.1 dB; 9.2 to 10.2 GHz; GaAs; MBE; SHF; X-band; class AB; doping profile; high-dielectric-constant substrates; high-efficiency; matching circuits; microwave circuit; molecular-beam epitaxy; power FET; power amplifier module; power-added-efficiency; single-stage amplifier; two-stage balanced amplifier; Doping profiles; Gain; Gallium arsenide; High power amplifiers; Microwave FETs; Molecular beam epitaxial growth; Phased arrays; Power amplifiers; Substrates; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22164