Title :
High frequency (GHz) and low resistance integrated inductors using magnetic materials
Author :
Gardner, Donald S. ; Crawford, Ankur M. ; Wang, Shan
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Integrated microinductors using magnetic materials were fabricated with cutoff frequencies over 3 GHz. Magnetic materials are typically not used in high-frequency inductors because their frequency range has been limited to <100 MHz. The high-frequency magnetic film, amorphous CoZrTa, was integrated into standard silicon process technology. Inductors consume large amounts of chip area, but with magnetic materials, the inductors can be made smaller thereby reducing their capacitance and resistance. A novel 3-dimensional structure for reducing the inductor´s resistance by an order of magnitude was also developed. Simulations of inductors with magnetics and measurements are presented.
Keywords :
MMIC; UHF integrated circuits; amorphous magnetic materials; cobalt alloys; inductors; magnetic microwave devices; magnetic thin film devices; tantalum alloys; zirconium alloys; 3 GHz; 3-dimensional structure; 3D structure; CoZrTa; HF integrated inductors; Si; amorphous CoZrTa; capacitance reduction; high frequency integrated inductors; high-frequency magnetic film; integrated microinductors; low resistance integrated inductors; magnetic materials; resistance reduction; standard Si process technology; Amorphous magnetic materials; Amorphous materials; Capacitance; Cutoff frequency; Electrical resistance measurement; Inductors; Magnetic films; Magnetic materials; Semiconductor device measurement; Silicon;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930029