High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

Author

Jenei, Snezana ; Decoutere, Stefaan ; Winderickx, Gillis ; Struyf, Herbert ; Tokei, Zsolt ; Vervoort, Iwan ; Vos, Ingrid ; Jaenen, Patrick ; Carbonell, Laure ; De Jaeger, Brice ; Donaton, Ricardo A. ; Vanhaelemeersch, Serge ; Maex, Karen ; Nauwelaers, Bar

fYear

2001

fDate

6-6 June 2001

Firstpage

107

Lastpage

109

Abstract

Thick Cu single damascene inductors with very high Q factors are integrated on top of a standard aluminum 3LM BEOL process. Obtained Q factors are more than four times higher than Q factors of the inductors of the same geometry processed in the Al 3LM BEOL. For an inductor of 2.8 nH inductance, a Q peak of 24 at 2 GHz was reached by using 4 μm thick Cu on a 2 μm IMD oxide layer.

Keywords

Q-factor; UHF integrated circuits; copper; inductors; integrated circuit metallisation; integrated circuit technology; thick film devices; 2 GHz; 2 micron; 4 micron; Al; Cu; IMD oxide layer; RFIC; high Q factors; high-Q inductor add-on module; standard Al 3LM BEOL process; thick Cu single damascene inductors; thick Cu/SiLK single damascene; Aluminum; Artificial intelligence; Dielectric substrates; Geometry; Inductance; Inductors; Q factor; Radio frequency; Resists; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930031

Filename

930031