Author :
Jenei, Snezana ; Decoutere, Stefaan ; Winderickx, Gillis ; Struyf, Herbert ; Tokei, Zsolt ; Vervoort, Iwan ; Vos, Ingrid ; Jaenen, Patrick ; Carbonell, Laure ; De Jaeger, Brice ; Donaton, Ricardo A. ; Vanhaelemeersch, Serge ; Maex, Karen ; Nauwelaers, Bar
Abstract :
Thick Cu single damascene inductors with very high Q factors are integrated on top of a standard aluminum 3LM BEOL process. Obtained Q factors are more than four times higher than Q factors of the inductors of the same geometry processed in the Al 3LM BEOL. For an inductor of 2.8 nH inductance, a Q peak of 24 at 2 GHz was reached by using 4 μm thick Cu on a 2 μm IMD oxide layer.
Keywords :
Q-factor; UHF integrated circuits; copper; inductors; integrated circuit metallisation; integrated circuit technology; thick film devices; 2 GHz; 2 micron; 4 micron; Al; Cu; IMD oxide layer; RFIC; high Q factors; high-Q inductor add-on module; standard Al 3LM BEOL process; thick Cu single damascene inductors; thick Cu/SiLK single damascene; Aluminum; Artificial intelligence; Dielectric substrates; Geometry; Inductance; Inductors; Q factor; Radio frequency; Resists; Silicon;
