• DocumentCode
    3193888
  • Title

    Node Criticality Computation for Circuit Timing Analysis and Optimization under NBTI Effect

  • Author

    Wang, Wenping ; Yang, Shengqi ; Cao, Yu

  • Author_Institution
    Arizona State Univ., Tempe
  • fYear
    2008
  • fDate
    17-19 March 2008
  • Firstpage
    763
  • Lastpage
    768
  • Abstract
    For sub-65 nm technology nodes, Negative Bias Temperature Instability (NBTI) has become a primary limiting factor of circuit lifetime. During the past few years, researchers have spent considerable and continuous efforts on modeling and characterization of NBTI-caused delay degradation at different design levels. Searching for solutions which can effectively reduce NBTI impact on circuit delay is still under way. In this work, we use node criticality computation to drive NBTI aware timing analysis and optimization. Circuits after being applied this optimization flow show strong resistance to NBTI delay degradation. Particularly, for the first time, we propose node criticality computation algorithm under the NBTI aware timing analysis and optimization framework and give answers to the following questions which have not been answered yet. They are: (1) how to define node criticality in a circuit under NBTI effect; (2) how to find the critical nodes which once are protected NBTI timing degradation will be effectively reduced. Experimental results show that by protecting the critical nodes found by this framework, circuit delay degradation can be reduced by up to 50%.
  • Keywords
    CMOS integrated circuits; circuit stability; integrated circuit reliability; thermal stability; CMOS technology; NBTI aware timing analysis; NBTI delay degradation; circuit delay degradation; circuit timing analysis; negative bias temperature instability effect; node criticality computation; Algorithm design and analysis; Circuit analysis; Circuit analysis computing; Degradation; Delay effects; Negative bias temperature instability; Niobium compounds; Protection; Timing; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-0-7695-3117-5
  • Type

    conf

  • DOI
    10.1109/ISQED.2008.4479834
  • Filename
    4479834