Title :
Optically-based testing of circuits and devices
Author_Institution :
Center for Ultrafast Opt. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. The progress of two of the principal optically based techniques for the testing of circuits and devices-electrooptic and photoconductive sampling-was discussed. The various embodiments of the optically based measurement techniques have bandwidths that approach or exceed 1 THz. They have been used to perform network analysis for the small-signal characterization of HEMTs (high electron mobility transistors) and other high-frequency devices, acquiring S-parameters up to frequencies greater than 100 GHz. Furthermore, since single-picosecond-risetime step functions with significant voltage amplitudes can be routinely generated using short laser pulses, large-signal switching measurements have also been made using optical methods.<>
Keywords :
MMIC; VLSI; high electron mobility transistors; integrated circuit testing; nondestructive testing; semiconductor device testing; HEMT; IC testing; MMIC; S-parameters; VLSI; electrooptic sampling; high-frequency devices; large-signal switching measurements; network analysis; optically based techniques; photoconductive sampling; small-signal characterization; testing; Bandwidth; Circuit testing; Electron optics; HEMTs; MODFETs; Measurement techniques; Optical devices; Optical pulse generation; Photoconducting devices; Pulse measurements;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1992. AP-S. 1992 Digest. Held in Conjuction with: URSI Radio Science Meeting and Nuclear EMP Meeting., IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-0730-5
DOI :
10.1109/APS.1992.221650