Title :
Low-k dielectrics characterization for damascene integration
Author :
Lin, Simon ; Jin, Changming ; Lui, Lawrence ; Tsai, Minghsing ; Daniels, Michael ; Gonzalez, Albert ; Wetzel, Jeffrey T. ; Monnig, K.A. ; Winebarger, P.A. ; Jang, Simon ; Yu, Douglas ; Liang, M.S.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
Both CVD and SOD low-k organosilicate dielectrics (2.2\n\n\t\t
Keywords :
Young´s modulus; bonds (chemical); chemical mechanical polishing; chromatography; dielectric thin films; etching; indentation; integrated circuit interconnections; mass spectroscopic chemical analysis; surface cleaning; surface contamination; thermal stability; 1LM integration performance; CMP; CVD organosilicate dielectrics; Cu; RC product; Raphael modeling; SOD organosilicate dielectrics; Young´s modulus; ash processes; blanket wafer characterization; bonding changes; clean processes; comb/serpentine structures; damascene integration; gas chromatography-mass spectroscopy; interconnect structures; low-k dielectrics characterization; material properties; nanoindentation; photoresist poisoning behavior; thermal extraction GC-MS; thermal stability; via poisoning; via-first-trench-last integration; Damascene integration; Data mining; Dielectric materials; Etching; Information analysis; Material properties; Nanostructured materials; Resists; Spectroscopy; Testing;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930042
