DocumentCode :
3193938
Title :
Electron distributions of charged dielectrics
Author :
Bonnelle, C. ; Jonnard, P. ; Vergand, F.
Author_Institution :
Lab. de Chimie Phys. Matiere et Rayonnement, Univ. Pierre et Marie Curie, Paris, France
fYear :
1995
fDate :
22-25 Oct 1995
Firstpage :
305
Lastpage :
308
Abstract :
The role of defect states on the trapping of incident electrons in a dielectric is discussed. Results of optical and X-ray luminescence concerning MgO and Al2O3 are presented as examples. Fluctuations of X-ray luminescence induced under irradiation by an electron beam of a few keV is shown
Keywords :
aluminium compounds; defect states; dielectric materials; electron beam effects; electron traps; magnesium compounds; photoluminescence; Al2O3; MgO; X-ray luminescence; charged dielectrics; defect states; electron beam irradiation; electron trapping; photoluminescence; Charge carrier processes; Dielectric constant; Electron optics; Electron traps; Lattices; Luminescence; Optical scattering; Phonons; Solids; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
Conference_Location :
Virginia Beach, VA
Print_ISBN :
0-7803-2931-7
Type :
conf
DOI :
10.1109/CEIDP.1995.483724
Filename :
483724
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3193938
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