A scalable MMIC-compatible power HBT

Author

Jackson, G. ; Teeter, D. ; Bradford, Dana ; Cobb, M.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

457

Abstract

A MMIC-compatible, scalable HBT, utilizing heatsinking through Au interconnects to local via-holes, is described. At 2.45 GHz, 960 /spl mu/m/sup 2/ area HBTs exhibit 34.5 dBm output power, 15.5 dB gain and 57% PAE. At 10 GHz, 600 /spl mu/m/sup 2/ HBTs have 33 dBm output, 8 dB gain, 47% PAE. Thermal impedance is reduced 40% on smaller devices, and the need for emitter ballasting is eliminated.<>

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; semiconductor device metallisation; thermal resistance; 10 GHz; 15.5 dB; 2.45 GHz; 47 percent; 57 percent; 8 dB; AlGaAs-GaAs; Au; Au interconnects; MMIC power amplifiers; MMIC-compatible scalable power HBT; PAE; collector I-V characteristics; heatsinking; local via-holes; output power; thermal impedance reduction; Electronic ballasts; Fingers; Gallium arsenide; Gold; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Power transmission lines; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405947

Filename

405947