DocumentCode
3193988
Title
Far-Infrared/THz Photodetector with Self-assembled Quantum Dots
Author
Nam, Hyoungdo ; Song, Jindong ; Choi, Wonjun ; Lee, Jungil ; Yang, Haesuk ; Zhang, Bo ; Lu, Wei
Author_Institution
Nano Device Research Center, KIST, Cheongryang P.O. Box 131, Seoul 130-650, Korea; Department of Physics, Chung-Ang Univ., Seoul 156-756, Korea
fYear
2005
fDate
12-14 Oct. 2005
Firstpage
289
Lastpage
292
Abstract
In this paper, we report 21 mm photoresponse with InAs/InGaAs/GaAs quantum-dot-in-a-well photodetector structure. The self-assembled InAs quantum dots were grown on InGaAs/GaAs well structure via atomic layer molecular beam epitaxy and fabricated as intersubbamd photoconductive structure. The far-infrared/THz 21 mm photoresponse was measured at 4.2K. Photoresponses were observed over the range of λ = 3 μm to 25μm with peaks at 21, 15, 8 μm, respectively.
Keywords
Teraherz; photodetectors; quantum dot; Atomic layer deposition; Detectors; Gallium arsenide; Indium gallium arsenide; Multilevel systems; Photodetectors; Physics; Quantum dots; Self-assembly; US Department of Transportation; Teraherz; photodetectors; quantum dot;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 2005. MWP 2005. International Topical Meeting on
Print_ISBN
89-950043-3-9
Type
conf
DOI
10.1109/MWP.2005.203596
Filename
1590324
Link To Document