Title :
Comparison of SiC and Si power semiconductor devices to be used in 2.5 kW DC/DC converter
Author :
Aghdam, M. G Hosseini ; Thiringer, T.
Author_Institution :
Dept. of Energy & Environ., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
With the fast development of silicon carbide (SiC) technology, SiC-based power semiconductor devices have started to complete Si components in transportation applications. In this paper, two dc/dc converters for hybrid electric vehicles (HEVs) application are designed and analyzed. The losses, efficiency, junction temperature, and the volume and weight of heat sinks of two converters are calculated for a Si and SiC solution for a 2.5 kW dc/dc converter. A performance comparison of the parameters mentioned above gives that SiC-based technology shows better performances than Si-based power semiconductor devices in the investigated dc/dc converter system. Finally, an economical evaluation shows that the SiC components can cost almost 2.5 times more in order to have the same total cost as for a Si solution for a 15 years operation.
Keywords :
DC-DC power convertors; elemental semiconductors; hybrid electric vehicles; power semiconductor devices; silicon; silicon compounds; wide band gap semiconductors; DC/DC converter; HEV; SiC; heat sinks; hybrid electric vehicles; junction temperature; performance comparison; power 2.5 kW; power semiconductor devices; silicon carbide; Costs; DC-DC power converters; Heat sinks; Hybrid electric vehicles; Power generation economics; Power semiconductor devices; Power system economics; Road transportation; Silicon carbide; Temperature; Si and SiC power semicondcutors; dc/dc converter; hybrid electric vehicle;
Conference_Titel :
Power Electronics and Drive Systems, 2009. PEDS 2009. International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4166-2
Electronic_ISBN :
978-1-4244-4167-9
DOI :
10.1109/PEDS.2009.5385745
