Title :
Ultra low-k porous silicon dioxide films from a plasma process
Author :
Han, Qingyuan ; Chen, Wei ; Waldfried, Carlo ; Escorcia, Orlando ; Sbrockey, Nick M. ; Bridgewate, Todd J. ; Moye, Eric S. ; Berry, Ivan
Author_Institution :
Axcelis Technol. Inc., Rockville, MD, USA
Abstract :
Ultra low dielectric constant porous silicon dioxide films were obtained through a plasma curing process. The process developed was based on a hydrogen silsesquioxane (HSQ) spin-on process with induction of porosity. The dielectric constants of plasma cured films are in a range of 2.0-2.2. The Young´s modulus values of the porous silicon dioxide films are between 5.7 and 9.0 GPa. The plasma cured porous films demonstrate the characteristics of porous silicon oxide. Furthermore, post plasma treatments have been developed to curb moisture adsorption in the films. The advantages of the plasma curing process are lower temperature, shorter processing time, and higher mechanical strength of the film than the thermal curing process.
Keywords :
Young´s modulus; adsorption; dielectric thin films; mechanical strength; moisture; permittivity; plasma materials processing; porous materials; silicon compounds; spin coating; SiO/sub 2/; Youngs modulus; dielectric constants; hydrogen silsesquioxane; mechanical strength; moisture adsorption; plasma cured films; plasma cured porous films; plasma curing process; plasma process; porosity; porous silicon dioxide films; porous silicon oxide; post plasma treatments; processing time; spin-on process; ultra low dielectric constant porous silicon dioxide films; ultra low-k porous silicon dioxide films; Curing; Dielectric constant; Dielectric materials; Dielectric thin films; Plasma materials processing; Plasma properties; Plasma temperature; Semiconductor films; Silicon compounds; Solvents;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930050
