Title :
Optimization of etching and stripping chemistries for Z3MS/sup TM/ Low-k
Author :
Lepage, M. ; Shamiryan, D. ; Baklanov, M. ; Struyf, H. ; Mannaert, G. ; Vanhaelemeersch, S. ; Weidner, K. ; Meynen, H.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Silicon-Oxy-Carbide (SiOC) materials are used as low-k materials for the 2.7-k generation. They can be etched with the fluorinated chemistries used for oxide but some optimizations are needed to achieve acceptable etch-rates and good selectivities. The resist strip is also very sensitive and requires even more development to keep the material properties intact after full damascene integration. Oxygen is useful but it can also cause severe damage. All experiments described in this paper were performed on Z3MS TM Low-k(*).
Keywords :
dielectric thin films; etching; optimisation; reaction rate constants; resists; silicon compounds; surface chemistry; SiOC; Z3MS low-k; etch-rates; etching; fluorinated chemistries; full damascene integration; low-k materials; optimization; resist strip; selectivities; silicon-oxy-carbide; stripping chemistries; Argon; Chemical technology; Chemistry; Etching; Plasma applications; Plasma materials processing; Plasma properties; Resists; Silicon carbide; Thickness measurement;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930051
