Optimization of etching and stripping chemistries for Z3MS/sup TM/ Low-k

Author

Lepage, M. ; Shamiryan, D. ; Baklanov, M. ; Struyf, H. ; Mannaert, G. ; Vanhaelemeersch, S. ; Weidner, K. ; Meynen, H.

Author_Institution

IMEC, Leuven, Belgium

fYear

2001

fDate

6-6 June 2001

Firstpage

174

Lastpage

176

Abstract

Silicon-Oxy-Carbide (SiOC) materials are used as low-k materials for the 2.7-k generation. They can be etched with the fluorinated chemistries used for oxide but some optimizations are needed to achieve acceptable etch-rates and good selectivities. The resist strip is also very sensitive and requires even more development to keep the material properties intact after full damascene integration. Oxygen is useful but it can also cause severe damage. All experiments described in this paper were performed on Z3MS^TM Low-k(*).

Keywords

dielectric thin films; etching; optimisation; reaction rate constants; resists; silicon compounds; surface chemistry; SiOC; Z3MS low-k; etch-rates; etching; fluorinated chemistries; full damascene integration; low-k materials; optimization; resist strip; selectivities; silicon-oxy-carbide; stripping chemistries; Argon; Chemical technology; Chemistry; Etching; Plasma applications; Plasma materials processing; Plasma properties; Resists; Silicon carbide; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930051

Filename

930051