Title :
Blech effect in single-inlaid Cu interconnects
Author :
Thrasher, S. ; Capasso, C. ; Zhao, L. ; Hernandez, R. ; Mulski, P. ; Rose, S. ; Nguyen, T. ; Kawasaki, H.
Author_Institution :
Digital DNA Labs., Motorola Inc., Austin, TX, USA
Abstract :
This work demonstrates that we can prevent electromigration failures in single-inlaid copper during DC electromigration testing by taking advantage of the Blech effect. Electromigration tests were performed on single-inlaid copper metal lines ranging from 5 to 250 μm in length at 300°C and a stress current density of 1.4×10 6 A/cm 2. Shorter lines showed no resistance increase, while longer lines failed at the same time, independent of line length. The critical product (jl) c was calculated to be between 2800 and 3500 A/cm at 300°C for single-inlaid copper.
Keywords :
copper; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; 300 C; 5 to 250 mum; Blech effect; Cu; DC electromigration testing; critical product; electromigration failure; electromigration tests; line length; resistance increase; single-inlaid Cu interconnects; single-inlaid copper; single-inlaid copper metal lines; stress current density; Aluminum; Contacts; Copper; Current density; Electromigration; Electron mobility; Geometry; Laboratories; Stress; Testing;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930052
