DocumentCode :
3194091
Title :
Front contact optimization for Cu(In,Ga)Se2 (sub)modules
Author :
Kessler, J. ; Wiedeman, S. ; Russell, L. ; Fogleboch, J. ; Skibo, S. ; Arya, R. ; Carlson, D.
Author_Institution :
Solarex Corp., Newtown, PA, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
885
Lastpage :
888
Abstract :
The impact of front contact window optimization on module design for different absorber bandgaps is examined, wider bandgaps being simultaneously less demanding of the ZnO IR transparency as well as its sheet conductivity. Based on small area device measurements, examples are given demonstrating the need and deposition method of the high resistive ZnO buffer layer as a function of the CdS buffer layer thickness. Questions concerning the validity of using doped ZnO characteristics of films deposited on glass are addressed. It is shown that the doped ZnO in devices can be potentially quite different from that on glass, some of this difference is tracked to the CdS. This should be accounted for when used in module prediction models
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor device models; semiconductor device testing; solar cells; zinc compounds; Cu(In,Ga)Se2 solar modules; CuInGaSe2-CdS-ZnO; IR transparency; absorber bandgaps; buffer layer; front contact window optimization; prediction models; sheet conductivity; small area device measurements; Area measurement; Buffer layers; Conductivity; Design optimization; Glass; Photonic band gap; Plasma devices; Predictive models; Thickness measurement; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564270
Filename :
564270
Link To Document :
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